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Philips PowerMOS Transistor BUK452-100A B Data Handbook / Specifications

Summary

This comprehensive datasheet details the BUK452-100A/B PowerMOS transistor, a robust N-channel enhancement mode field-effect component designed for high-power applications. The manual provides extensive technical specifications, including absolute maximum ratings, detailed thermal derating curves, dynamic characteristics, and safe operating areas. It is engineered for demanding industrial uses such as Switched Mode Power Supplies (SMPS), motor control circuits, welding equipment, and various DC/DC or AC/DC converters.

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查询BUK452-100A供应商 Philips Semiconductors Product Specification

Power MOS transistor BUK452-100A/B

GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK452 -100A -100B

The device is intended for use in VDS Drain-source voltage

Switched Mode Power Supplies ID Drain current (DC) (SMPS), motor control, welding, Ptot Total power dissipation DC/DC and AC/DC converters, and Tj Junction temperature ˚C

in general purpose switching RDS(ON) Drain-source on-state 0.25 0.3

applications. resistance

PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION

gate drain

source tab drain

LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage VDGR Drain-gate voltage RGS = 20 kΩ ±VGS Gate-source voltage

ID Drain current (DC) Tmb = 25 ˚C ID Drain current (DC) Tmb = 100 ˚C 7.7 IDM Drain current (pulse peak value) Tmb = 25 ˚C Ptot Total power dissipation Tmb = 25 ˚C Tstg Storage temperature - 55 ˚C Tj Junction Temperature ˚C

THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Rth j-mb Thermal resistance junction to 2.5 K/W mounting base

Rth j-a Thermal resistance junction to K/W

ambient

April 1993 Rev 1.100

Page Summary Contents For Philips PowerMOS Transistor BUK452-100A B Data Handbook / Specifications

Page 1 查询BUK452-100A供应商 Philips Semiconductors Product Specification Power MOS transistor BUK452-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT fie...
Page 2 Philips Semiconductors Product Specification Power MOS transistor BUK452-100A/B STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS D...
Page 3 Philips Semiconductors Product Specification Power MOS transistor BUK452-100A/B PD% Normalised Power Derating Zth j-mb / (K/W) BUKX52 1E-01 0.02 tp D = tp Tmb / C t / s Fig.1. Normalised power dissipa...
Page 4 Philips Semiconductors Product Specification Power MOS transistor BUK452-100A/B VGS(TO) / V ID / A BUK452-100A Tj / C = 25 VGS / V Tj / C Fig.7. Typical transfer characteristics. Fig.10. Gate threshol...
Page 5 Philips Semiconductors Product Specification Power MOS transistor BUK452-100A/B BUK452-100 WDSS% VGS / V VDS / V =20 QG / n C Tmb / C Fig.13. Typical turn-on gate-charge characteristics. Fig.15. Norma...
Page 6 Philips Semiconductors Product Specification Power MOS transistor BUK452-100A/B MECHANICAL DATA Dimensions in mm Net Mass: 2 g max 10,3 max 5,9 min 15,8 max 3,03,0 max not tinned 13,5 min 1,3 max (2x)...
Page 7 Philips Semiconductors Product Specification Power MOS transistor BUK452-100A/B DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product...

Manual Details

Brand Philips
Pages 7
File Size 54.78 KB
Published June 22, 2026
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Frequently Asked Questions

What is the maximum drain current for BUK452-100A?

Maximum DC drain current is 11A at 25°C mounting base temperature.

What thermal resistance does BUK452-100A have?

Thermal resistance junction to mounting base is min 2.5 K/W.

Can this transistor be used in welding equipment?

Yes, it's intended for welding applications among other uses.

How should this transistor be installed for thermal management?

Manage power dissipation through the mounting base (Rth j-mb 2.5K/W).