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Philips PowerMOS Transistor BUK454-60H Data Handbook

Summary

The BUK454-60H is a high-power N-channel PowerMOS transistor engineered for reliable performance in demanding power applications. It is essential for building robust electronics, including SMPS units, motor controllers, welding equipment, and DC/DC converters. This datasheet provides comprehensive technical specifications, detailing absolute maximum ratings, thermal resistances, dynamic characteristics, and detailed operating limits (up to 60V). Designed specifically for electrical engineers and hardware designers requiring accurate, professional-grade data for high-power switching circuit development.

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查询BUK454-60H供应商 Philips Semiconductors Product specification

Power MOS transistor BUK454-60H

GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a

plastic envelope. VDS Drain-source voltage

The device is intended for use in ID Drain current (DC) automotive applications, Switched Ptot Total power dissipation Mode Power Supplies (SMPS), Tj Junction temperature ˚C motor control, welding, DC/DC and RDS(ON) Drain-source on-state mΩ AC/DC converters, and in general resistance purpose switching applications.

PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION

gate drain

source tab drain

LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage VDGR Drain-gate voltage RGS = 20 kΩ ±VGS Gate-source voltage ID Drain current (DC) Tmb = 25 ˚C ID Drain current (DC) Tmb = 100 ˚C IDM Drain current (pulse peak value) Tmb = 25 ˚C Ptot Total power dissipation Tmb = 25 ˚C Tstg Storage temperature - 55 ˚C Tj Junction temperature ˚C

THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rth j-mb Thermal resistance junction to 1.2 K/W

mounting base

Rth j-a Thermal resistance junction to K/W

ambient

August 1996 Rev 1.000

Page Summary Contents For Philips PowerMOS Transistor BUK454-60H Data Handbook

Page 1 查询BUK454-60H供应商 Philips Semiconductors Product specification Power MOS transistor BUK454-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect...
Page 2 Philips Semiconductors Product specification Power MOS transistor BUK454-60H STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS Drai...
Page 3 Philips Semiconductors Product specification Power MOS transistor BUK454-60H PD% Normalised Power Derating Zth j-mb / (K/W) BUK454-60H 0.01 D = tp Tmb / C t / s Fig.1. Normalised power dissipation. Fi...
Page 4 Philips Semiconductors Product specification Power MOS transistor BUK454-60H BUK474-60H VGS(TO) / V ID / A Tj / C = VGS / V Tj / C Fig.7. Typical transfer characteristics. Fig.10. Gate threshold volta...
Page 5 Philips Semiconductors Product specification Power MOS transistor BUK454-60H VGS / V BUK474-60H WDSS% VDS / V = 12 QG / n C Tmb / C Fig.13. Typical turn-on gate-charge characteristics. Fig.15. Normali...
Page 6 Philips Semiconductors Product specification Power MOS transistor BUK454-60H MECHANICAL DATA Dimensions in mm Net Mass: 2 g max 10,3 max 5,9 min 15,8 max 3,03,0 max not tinned 13,5 min 1,3 max (2x) 0,...
Page 7 Philips Semiconductors Product specification Power MOS transistor BUK454-60H DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product de...

Manual Details

Brand Philips
Pages 7
File Size 49.81 KB
Published July 15, 2026
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Frequently Asked Questions

What is the maximum allowed continuous drain current at 25°C?

The maximum rating is 41 A (I Drain current (DC) at T = 25˚C).

Is this device safe for use in life support appliances?

No, these products are not designed for use in life support systems. Use is at the customer’s own risk.

What must be done if the device is exposed to limiting values for extended periods?

Exposure may affect device reliability, and these ratings are stress only.

What are the typical limits for gate-source voltage?

The required Gate-source voltage range is -30 V to 30 V (GS).