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PHILIPS BFQ17 Data Sheet/Manual

Summary

Product specification datasheet (September 1995) for the Philips BFQ17 NPN 1 GHz wideband transistor in SOT89 plastic surface-mount package (Code: FA), designed for thick and thin-film circuit applications with extremely good intermodulation properties and high power gain. Quick reference data: 40V collector-base voltage, 25V collector-emitter voltage, 300 mA peak collector current, 1W total power dissipation (up to 145°C soldering point), 1.5 GHz transition frequency at 150mA/15V, and 1.9 pF fe

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DISCRETE SEMICONDUCTORS

DATA SHEET

BFQ17 NPN 1 GHz wideband transistor

Product specification September 1995

File under Discrete Semiconductors, SC14

Page Summary Contents For PHILIPS BFQ17 Data Sheet/Manual

Page 1 查询BFQ17供应商 DISCRETE SEMICONDUCTORS DATA SHEET BFQ17 NPN 1 GHz wideband transistor Product specification September 1995 File under Discrete Semiconductors, SC14
Page 2 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFQ17 DESCRIPTION PINNING NPN transistor in a SOT89 plastic PIN DESCRIPTION envelope intended for application in Code: FA thi...
Page 3 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFQ17 THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE Rth j-s thermal resistance from junction to up to Ts ...
Page 4 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFQ17 MBB365 MBB828 handbook, halfpage handbook, halfpage VCB (V) VCE 5 V; Tj °C. IE ie 0; f = 1 MHz; Tj °C. Fig.2 DC current...
Page 5 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFQ17 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 scale DIMENSIONS (...
Page 6 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFQ17 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for produc...