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PHILIPS BFQ135 Data Sheet/Manual

Summary

This specialized NPN 6.5 GHz wideband transistor is engineered for high-reliability performance in demanding RF and microwave applications. The robust dual-emitter SOT172A2 package ensures stable operation for critical systems such as radar amplifiers, MATV equipment, oscilloscopes, and spectrum analyzers. This technical manual provides comprehensive details, including absolute maximum ratings, detailed performance data (e.g., cutoff frequency, unilateral power gain), and dedicated testing circuits to guide engineers in selecting the optimal component for high-frequency circuit design.

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查询BFQ135供应商

DISCRETE SEMICONDUCTORS

DATA SHEET

BFQ135 NPN 6.5 GHz wideband transistor

Product specification Nov

Supersedes data of September File under Discrete Semiconductors, SC14

Page Summary Contents For PHILIPS BFQ135 Data Sheet/Manual

Page 1 查询BFQ135供应商 DISCRETE SEMICONDUCTORS DATA SHEET BFQ135 NPN 6.5 GHz wideband transistor Product specification Nov Supersedes data of September File under Discrete Semiconductors, SC14
Page 2 Philips Semiconductors Product specification NPN 6.5 GHz wideband transistor BFQ135 FEATURES DESCRIPTION Optimum temperature profile and NPN wideband transistor in a 4-lead fpage excellent reliability...
Page 3 Philips Semiconductors Product specification NPN 6.5 GHz wideband transistor BFQ135 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MA...
Page 4 Philips Semiconductors Product specification NPN 6.5 GHz wideband transistor BFQ135 CHARACTERISTICS Tj °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut...
Page 5 Philips Semiconductors Product specification NPN 6.5 GHz wideband transistor BFQ135 handbook, full pagewidth VBB L4 output input MEA260 L1 n H. L2 n H (2 turns copper wire, internal diameter 2 mm). L3...
Page 6 Philips Semiconductors Product specification NPN 6.5 GHz wideband transistor BFQ135 MEA954 MEA956 im (d B) –40 VCE V; VO d Bm V; Tamb °C; measured at fp fq MHz. VCE V. Fig.5 Intermodulation distortion...
Page 7 Philips Semiconductors Product specification NPN 6.5 GHz wideband transistor BFQ135 PACKAGE OUTLINE Studded ceramic package; 4 leads SOT172A2 D2 AM detail X 10 mm scale DIMENSIONS (millimetre dimensio...
Page 8 Philips Semiconductors Product specification NPN 6.5 GHz wideband transistor BFQ135 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for pro...
Page 9 Philips Semiconductors Product specification NPN 6.5 GHz wideband transistor BFQ135 NOTES
Page 10 Philips Semiconductors Product specification NPN 6.5 GHz wideband transistor BFQ135 NOTES
Page 11 Philips Semiconductors Product specification NPN 6.5 GHz wideband transistor BFQ135 NOTES
Page 12 Philips Semiconductors – a worldwide company Argentina: see South America Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 82785, Fax. +31 Australia: 34 Waterloo Road, NORTH RYDE, NSW...

Manual Details

Brand Philips
Pages 12
File Size 82.04 KB
Published July 04, 2026
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Frequently Asked Questions

Is this product safe to handle?

It contains beryllium oxide, which is safe only if the BeO disc remains undamaged. Dispose of it as chemical or special waste.

What are the primary applications for the BFQ135 transistor?

It is suitable for MATV and microwave amplifiers, radar, emitter systems, oscilloscopes, and spectrum analyzers.

What is the maximum total power dissipation (Ptot)?

The maximum specified total power dissipation (Ptd) under these conditions is 2.7 W.

If I exceed the absolute maximum ratings, what are the risks?

Refer to the Absolute Maximum Rating System for limiting values; exceeding these limits compromises product safety and reliability.