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Philips BLF522 Data Sheet/Manual

Summary

Technical specification for 查询BLF522供应商查询BLF522供应商 DISCRETE SEMICONDUCTORS DATA SHEET BLF522 UHF power MOS transistor September 1992 Product specificationPhilips Semiconductors Product specification UHF power MOS transistor BLF522. This datasheet provides comprehensive electrical characteristics, pin configurations, thermal parameters, and application information. Includes graphs, charts, and technical data for proper component selection and implementation. Essential reference for circuit desig...

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查询BLF522供应商

DISCRETE SEMICONDUCTORS

DATA SHEET

BLF522 UHF power MOS transistor

Product specification September

Page Summary Contents For Philips BLF522 Data Sheet/Manual

Page 1 查询BLF522供应商 DISCRETE SEMICONDUCTORS DATA SHEET BLF522 UHF power MOS transistor Product specification September
Page 2 Philips Semiconductors Product specification UHF power MOS transistor BLF522 FEATURES PIN CONFIGURATION High power gain Easy power control halfpage Gold metallization Good thermal stability Withstands...
Page 3 Philips Semiconductors Product specification UHF power MOS transistor BLF522 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS dr...
Page 4 Philips Semiconductors Product specification UHF power MOS transistor BLF522 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-sourc...
Page 5 Philips Semiconductors Product specification UHF power MOS transistor BLF522 MRA253 MRA246 handbook, halfpage handbook, halfpage RDSon o C) Tj ( VDS (V) ID 0.7 A; VGS 15 V; VGS 0; f = 1 MHz. Fig.6 Dra...
Page 6 Philips Semiconductors Product specification UHF power MOS transistor BLF522 APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 °C; Rth mb-h 0.4 K/W, unless otherwise specified. RF performance in a...
Page 7 Philips Semiconductors Product specification UHF power MOS transistor BLF522 handbook, full pagewidth output input MGA070 500 MHz. Fig.11 Test circuit for class-B operation. September
Page 8 Philips Semiconductors Product specification UHF power MOS transistor BLF522 List of components (class-B test circuit) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C8, C20 multilayer ceram...
Page 9 Philips Semiconductors Product specification UHF power MOS transistor BLF522 andbook, full pagewidth R3 MBC218 150 mm handbook, full pagewidth strap strap strap strap 70 mm strap rivets strap (12x) st...
Page 10 Philips Semiconductors Product specification UHF power MOS transistor BLF522 MRA250 MRA251 handbook, halfpage ri Zi handbook, halfpage f (MHz) f (MHz) Class-B operation; VDS = 12.5 V; IDQ = 50 m A; Cl...
Page 11 Philips Semiconductors Product specification UHF power MOS transistor BLF522 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads SOT171A H1 Cw2 b1 U2 EE1H 10 mm scale DIMENSIONS (millim...
Page 12 Philips Semiconductors Product specification UHF power MOS transistor BLF522 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product de...