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PHILIPS BLF404 Data Sheet / Manual

Summary

The BLF404 is a high-power N-channel D-MOS UHF power transistor designed specifically for broadband operation in VHF/UHF communication transmitters. This comprehensive datasheet provides essential technical parameters, including absolute maximum ratings, RF performance curves, thermal characteristics, and deep operational details (such as on-state resistance and capacitance). It is an indispensable resource for electronics engineers and designers building robust, high-frequency communication equipment requiring reliable power gain and controlled stability.

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查询BLF404供应商

DISCRETE SEMICONDUCTORS

DATA SHEET

BLF404 UHF power MOS transistor

Product specification Jan

Supersedes data of 1997 Oct 28

Page Summary Contents For PHILIPS BLF404 Data Sheet / Manual

Page 1 查询BLF404供应商 DISCRETE SEMICONDUCTORS DATA SHEET BLF404 UHF power MOS transistor Product specification Jan Supersedes data of 1997 Oct 28
Page 2 Philips Semiconductors Product specification UHF power MOS transistor BLF404 FEATURES PINNING High power gain PIN DESCRIPTION Easy power control 1, 8 source Gold metallization 2, 3 gate Good thermal s...
Page 3 Philips Semiconductors Product specification UHF power MOS transistor BLF404 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT...
Page 4 Philips Semiconductors Product specification UHF power MOS transistor BLF404 CHARACTERISTICS Tj °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source bre...
Page 5 Philips Semiconductors Product specification UHF power MOS transistor BLF404 MRA253 MRA246 handbook, halfpage handbook, halfpage RDSon o C) Tj ( VDS (V) ID 0.7 A; VGS V. VGS 0; f MHz; Tj °C. Fig.5 Dra...
Page 6 Philips Semiconductors Product specification UHF power MOS transistor BLF404 APPLICATION INFORMATION RF performance at Tmb °C in a common source test circuit with the device soldered on a printed-circ...
Page 7 Philips Semiconductors Product specification UHF power MOS transistor BLF404 Test circuit information handbook, full pagewidth +VD C10 output input 50 Ω L5 L6 L7 L3 DUT MGM523 Fig.10 Class-AB common s...
Page 8 Philips Semiconductors Product specification UHF power MOS transistor BLF404 List of components used in test circuit (see Figs and 11). COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1 electrol...
Page 9 Philips Semiconductors Product specification UHF power MOS transistor BLF404 handbook, full pagewidth MGM524 Dimensions in mm. The components are situated on one side of the copper-clad printed-circui...
Page 10 Philips Semiconductors Product specification UHF power MOS transistor BLF404 MGM517 MGM518 handbook, halfpage handbook, halfpage ri xi ZL (Ω) (Ω)xi (Ω) f (MHz) f (MHz) CW, class-AB operation; VDS 12.5...
Page 11 Philips Semiconductors Product specification UHF power MOS transistor BLF404 MOUNTING RECOMMENDATIONS Both the metallized groundplate and leads contribute to the heatflow. It is recommended that the t...
Page 12 Philips Semiconductors Product specification UHF power MOS transistor BLF404 PACKAGE OUTLINE Ceramic surface mounted package; 8 leads SOT409A H1 Bw2 2.5 5 mm scale DIMENSIONS (millimetre dimensions ar...
Page 13 Philips Semiconductors Product specification UHF power MOS transistor BLF404 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product de...
Page 14 Philips Semiconductors Product specification UHF power MOS transistor BLF404 NOTES
Page 15 Philips Semiconductors Product specification UHF power MOS transistor BLF404 NOTES
Page 16 Philips Semiconductors – a worldwide company Argentina: see South America Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 82785, Fax. +31 Australia: 34 Waterloo Road, NORTH RYDE, NSW...

Manual Details

Brand Philips
Pages 16
File Size 119.40 KB
Published July 12, 2026
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Frequently Asked Questions

What is the maximum drain-source power dissipation at 85°C?

The total power dissipation (P_tot) max value is -8.3 W at T ≤ 85 °C.

Are there specific precautions for handling this component?

Yes, the product must be handled in anti-static packing to prevent damage from electrostatic discharge.

What are the typical on-state drain resistance parameters?

The typical R_DSon values range from 2.3 to 200 - ohmios (Ω) at standard test conditions.

Can this transistor withstand load mismatches?

Yes, it is capable of withstanding a VSWR = 10:1 mismatch under specified operating conditions.