Fairchild NZT660 NZT660A PNP Low Saturation Transistor Data Handbook

ZT660/N ZT660A PN P Low Saturation Transistor

April 2005

NZT660/NZT660A PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.

SOT-2231

1. Base 2. Collector 3. Emitter

Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol Parameter NZT660 NZT660A Units VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage

VEBO Emitter-Base Voltage

IC Collector Current - Continuous

TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ +150 - 55 ~ +150 °C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES:

1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics Ta = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCEO Collector-Emitter Breakdown Voltage IC = 10m A BVCBO Collector-Base Breakdown Voltage IC = 100µA NZT660

NZT660A

BVEBO Emitter-Base Breakdown Voltage IE = 100µA

ICBO Collector-Base Cutoff Current VCB = 30V

VCB = 30V, TA = 100°C µA

IEBO Emitter-Base Cutoff Current VEB = 4V

On Characteristics *

h FE DC Current Gain IC = 100m A, VCE = 2V

IC = 500m A, VCE = 2V NZT660 NZT660A IC = 1A, VCE = 2V IC = 3A, VCE = 2V

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com NZT660/NZT660A Rev. C3