Fairchild ZTX749 PNP Low Saturation Transistor Data Sheet
Summary
This detailed product manual provides comprehensive specifications for a high-performance PNP Low Saturation Transistor. Designed to handle up to 2A continuous collector current with high gain and low saturation voltage, this component is critical for power switching applications. The datasheet covers essential Absolute Maximum Ratings, electrical characteristics (both off and on), small-signal performance data ($\text{f}_{\text{T}}$), and thermal guidelines, making it an indispensable resource for electronics engineers and circuit designers building robust power management systems.
Page 1 Text Content
ZTX749
ZTX749
PNP Low Saturation Transistor This device are designed with high current gain and low saturation voltage with collector currents up to 2A continuous.
TO-226
Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -25
VCBO Collector-Base Voltage -35
VEBO Emitter-Base Voltage -5
IC Collector Current - Continuous -2
TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics
BVCEO Collector-Emitter Breakdown Voltage IC = -10m A -25 BVCBO Collector-Base Breakdown Voltage IC = -100µA -35 BVEBO Emitter-Base Breakdown Voltage IE = -100µA -5
ICBO Collector Cutoff Current VCB = -30V -100 n A VCB = -30V, TA = 100°C -10 µA
IEBO Emitter Cutoff Current VEB = -4V -100 n A
On Characteristics* h FE DC Current Gain IC = -50m A, VCE = -2V
IC = -1A, VCE = -2V IC = -2A, VCE = -2V IC = -6A, VCE = -2V
VCE(sat) Collector-Emitter Saturation Voltage IC = -1A, IB = -100m A -300 m V IC = -2A, IB = -200m A -500
VBE(sat) Base-Emitter Saturation Voltage IC = -1A, IB = -100m A -1.25 VBE(on) Base-Emitter On Voltage IC = -1A, VCE = -2V -1 Small-Signal Characteristics Cobo Output Capacitance VCB = -10V, IE = 0, f = 1MHz PF
f T Transition Frequency IC = 1-00m A, VCE = -5V
f = 100MHz
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%
Thermal Characteristics TA=25°C unless otherwise noted Symbol Parameter Max. Units PD Total Device Dissipation
RθJA Thermal Resistance, Junction to Ambient °C/W
©2003 Fairchild Semiconductor Corporation Rev. A, August 2003
Page Summary Contents For Fairchild ZTX749 PNP Low Saturation Transistor Data Sheet
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 3 |
| File Size | 40.91 KB |
| Published | May 20, 2026 |
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Frequently Asked Questions
What is the maximum continuous collector current limit?
The rated collector current ($I_C$) must not exceed 2 A for continuous operation.
What are the allowed operating junction temperature limits?
The Operating Junction Temperature Range is set from -55 to +150 °C.
Can this component be used in life support systems or critical applications?
No, its use as critical components in life support devices requires express written approval from Fairchild Semiconductor Corporation.