Fairchild BCV26 PNP Darlington Transistor Data Sheet / User Manual

BCV26

SOT-23 Mark: FD

PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 m A. Sourced from Process 61.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current - Continuous 1.2

TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units

*BCV26

PD Total Device Dissipation m W

Derate above 25°C 2.8 m W/°C

RθJA Thermal Resistance, Junction to Ambient °C/W

*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

1997 Fairchild Semiconductor Corporation