Fairchild ZTX749A PNP Low Saturation Transistor Data Sheet
Summary
The ZTX749A is a high-performance PNP low saturation transistor designed for reliable switching applications requiring up to 2A of continuous collector current and excellent current gain efficiency. This technical manual provides comprehensive specifications, including absolute maximum ratings, detailed small-signal characteristics, and thermal management data. It is an ideal component for electronics designers building robust circuits that require stable power switching performance.
Page 1 Text Content
ZTX749A
ZTX749A
PNP Low Saturation Transistor This device are designed with high current gain and low saturation voltage with collector currents up to 2A continuous.
TO-226
Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -35
VCBO Collector-Base Voltage -45
VEBO Emitter-Base Voltage -5
IC Collector Current - Continuous -2
TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics
BVCEO Collector-Emitter Breakdown Voltage IC = -10m A -35 BVCBO Collector-Base Breakdown Voltage IC = -100µA -45 BVEBO Emitter-Base Breakdown Voltage IE = -100µA -5
ICBO Collector Cutoff Current VCB = -30V -100 n A VCB = -30V, TA = 100°C -10 µA
IEBO Emitter Cutoff Current VEB = -4V -100 n A
On Characteristics* h FE DC Current Gain IC = -50m A, VCE = -2V
IC = -1A, VCE = -2V IC = -2A, VCE = -2V IC = -6A, VCE = -2V
VCE(sat) Collector-Emitter Saturation Voltage IC = -1A, IB = -100m A -300 m V IC = -2A, IB = -200m A -500
VBE(sat) Base-Emitter Saturation Voltage IC = -1A, IB = -100m A -1.25 VBE(on) Base-Emitter On Voltage IC = -1A, VCE = -2V -1 Small-Signal Characteristics Cobo Output Capacitance VCB = -10V, IE = 0, f = 1MHz PF
f T Transition Frequency IC = -100m A, VCE = -5V
f = 100MHz
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%
Thermal Characteristics TA=25°C unless otherwise noted Symbol Parameter Max. Units PD Total Device Dissipation
RθJA Thermal Resistance, Junction to Ambient °C/W
©2003 Fairchild Semiconductor Corporation Rev. C, August 2003
Page Summary Contents For Fairchild ZTX749A PNP Low Saturation Transistor Data Sheet
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 3 |
| File Size | 40.93 KB |
| Published | June 20, 2026 |
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