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Fairchild ZTX749A PNP Low Saturation Transistor Data Sheet

Summary

The ZTX749A is a high-performance PNP low saturation transistor designed for reliable switching applications requiring up to 2A of continuous collector current and excellent current gain efficiency. This technical manual provides comprehensive specifications, including absolute maximum ratings, detailed small-signal characteristics, and thermal management data. It is an ideal component for electronics designers building robust circuits that require stable power switching performance.

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ZTX749A

ZTX749A

PNP Low Saturation Transistor This device are designed with high current gain and low saturation voltage with collector currents up to 2A continuous.

TO-226

Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -35

VCBO Collector-Base Voltage -45

VEBO Emitter-Base Voltage -5

IC Collector Current - Continuous -2

TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics

BVCEO Collector-Emitter Breakdown Voltage IC = -10m A -35 BVCBO Collector-Base Breakdown Voltage IC = -100µA -45 BVEBO Emitter-Base Breakdown Voltage IE = -100µA -5

ICBO Collector Cutoff Current VCB = -30V -100 n A VCB = -30V, TA = 100°C -10 µA

IEBO Emitter Cutoff Current VEB = -4V -100 n A

On Characteristics* h FE DC Current Gain IC = -50m A, VCE = -2V

IC = -1A, VCE = -2V IC = -2A, VCE = -2V IC = -6A, VCE = -2V

VCE(sat) Collector-Emitter Saturation Voltage IC = -1A, IB = -100m A -300 m V IC = -2A, IB = -200m A -500

VBE(sat) Base-Emitter Saturation Voltage IC = -1A, IB = -100m A -1.25 VBE(on) Base-Emitter On Voltage IC = -1A, VCE = -2V -1 Small-Signal Characteristics Cobo Output Capacitance VCB = -10V, IE = 0, f = 1MHz PF

f T Transition Frequency IC = -100m A, VCE = -5V

f = 100MHz

* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%

Thermal Characteristics TA=25°C unless otherwise noted Symbol Parameter Max. Units PD Total Device Dissipation

RθJA Thermal Resistance, Junction to Ambient °C/W

©2003 Fairchild Semiconductor Corporation Rev. C, August 2003

Page Summary Contents For Fairchild ZTX749A PNP Low Saturation Transistor Data Sheet

Page 1 ZTX749A ZTX749A PNP Low Saturation Transistor This device are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. TO-226 Absolute Maximum Ratings TA...
Page 2 ZTX749A Package Dimensions TO-226 2" TYP 2" TYP 5" TYP TO-226AE (95,99) For leadformed option ordering, refer to Tape & Reel data information. Dimensions in Millimeters ©2003 Fairch...
Page 3 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT...