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Fairchild MPSA63 MMBTA63 PZTA63 PNP Darlington Transistor User's Manual

Summary

These datasheets provide comprehensive technical specifications for Darlington Transistors, ideal for applications demanding extreme high current gain and reliable power switching up to 800 mA. The manual covers all necessary electrical characteristics, including absolute maximum ratings, thermal management curves, saturation voltages, and DC/PNP parameters. This resource is essential for electrical engineers and circuit designers who require robust components for demanding power electronic and signal transfer systems.

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PSA 63 / M TA 63 / PZTA 63 — PN P D arlington Transistor

August 2010

MPSA63 / MMBTA63 / PZTA63 PNP Darlington Transistor Features This device is designed for applications requiring extremely high current gain at currents to 800 m A. Sourced from Process 61.

MPSA63 MMBTA63 PZTA63

TO-92 SOT-23 SOT-223

Mark:2U

Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage -30

VCBO Collector-Base Voltage -30 VEBO Emitter-Base Voltage -10 IC Collector Current - Continuous -1.2 TJ, Tstg Operating and Storage Junction Temperature Range - 55 to +150 °C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics Ta = 25°C unless otherwise noted

Symbol Parameter Units

MPSA63 *MMBTA63 **PZTA63

Total Device Dissipation 1,000 m W

Derate above 25°C 5.0 2.8 8.0 m W/°C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient °C/W

* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”. ** Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm2.

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com MPSA63 / MMBTA63 / PZTA63 Rev. A1

Page Summary Contents For Fairchild MPSA63 MMBTA63 PZTA63 PNP Darlington Transistor User's Manual

Page 1 PSA 63 / M TA 63 / PZTA 63 — PN P D arlington Transistor August 2010 MPSA63 / MMBTA63 / PZTA63 PNP Darlington Transistor Features This device is designed for applications requiring extremely high curr...
Page 2 PSA 63 / M TA 63 / PZTA 63 — PN P D arlington Transistor IC IN Electrical Characteristics Ta = 25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics BV(BR)CES...
Page 3 PSA 63 / M TA 63 / PZTA 63 — PN P D arlington Transistor ES IT TA Typical Performance Characteristics (continued) Base-Emitter Saturation Base Emitter ON Voltage vs Voltage vs Collector Current Collec...
Page 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive lis...

Manual Details

Brand Fairchild
Pages 4
File Size 179.82 KB
Published July 15, 2026
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Frequently Asked Questions

What is the maximum continuous collector current?

The continuous collector current capacity (I_C) is listed in the Absolute Maximum Ratings table, with values of -1.2 A for MPSA63.

How does thermal resistance impact operation efficiency?

Thermal Resistance (Rth) dictates heat management: R junction to case (thetaJC) ranges from 83.3 °C/W to 200 °C/W, which is vital for cooling and dissipation.

Are there limits when operating at high temperatures?

The maximum operating and storage junction temperature range is -55 to +150 °C (J, stg). Factory consultation is needed for pulsed operations.

What are the standard TO-92 package variants?

The device is available in several packages including TO-92, SOT-23, and SOT-223, with different listed thermal resistances depending on the case size.