Fairchild NZT605 NPN Darlington Transistor User's Manual
Summary
The NZT605 is a high-performance NPN Darlington Transistor designed for demanding applications requiring extremely high current gains up to 1.0A. This technical datasheet provides comprehensive specifications, including absolute maximum ratings, detailed electrical characteristics (like saturation voltages and cutoff currents), thermal dissipation limits, and precise dimensional data in the SOT-223 package. It is essential reference documentation for electronic designers and engineers selecting reliable power switching components for amplified circuit designs.
Page 1 Text Content
ZT605 N PN arlington Transistor
January 2007
NZT605 NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. Sourced from process 06.
SOT-223
1. Base 2.4. Collector 3. Emitter
Absolute Maximum Ratings * TC = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current - Continuous 1.5 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady limits. The factory should be consulted on application involving pulsed or low duty cycle operations
Electrical Characteristics * TC = 25°C unless otherwise noted Symbol Parameter Conditions Min. Max Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10m A, IB = 0 V(BR)CBO Collector-Base Breakdown Voltage IC = 100µA, IE = 0 V(BR)EBO Emitter-Base Breakdown Voltage IE = 100µA, IC = 0 ICBO Collector Cutoff Current VCB = 120V, IE = 0 n A ICES Collector Cutoff Current VCE = 120V, IE = 0 n A IEBO Emitter Cut-off Current VEB = 8.0V, IC = 0 n A On Characteristics * h FE DC Current Gain VCE = 5.0V, IC = 50m A
VCE = 5.0V, IC = 500m A VCE = 5.0V, IC = 1.0A 100K VCE = 5.0V, IC = 1.5A VCE = 5.0V, IC = 2.0A
VCE(sat) Collector-Emitter Saturation Voltage IC = 250m A, IB = 0.25m A
IC = 1.0A, IB = 1.0m A 1.5
VBE(sat) Base-Emitter Saturation Voltage IC = 1.0A, IB = 1.0m A 1.8 VBE(on) Base-Emitter On Voltage IC = 1.0A, VCE = 5.0V 1.7 Small Signal characteristics f T Transition Frequency IC = 100m A, VCE = 10V, f = 20MHz MHz * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com NZT605 Rev. C
Page Summary Contents For Fairchild NZT605 NPN Darlington Transistor User's Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 4 |
| File Size | 81.66 KB |
| Published | July 10, 2026 |
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Frequently Asked Questions
What is the maximum continuous collector current rating for this transistor?
The continuous collector current capacity is 1.5 A.
How should I account for device dissipation if it operates above 25°C?
If operating above 25°C, use a derating factor of 8.0 mW/°C to calculate device power dissipation.
What is the rated collector-emitter breakdown voltage (BR) at 10mA current?
The minimum collector-emitter breakdown voltage must be 110 V (BR).