Fairchild KSH122 NPN Silicon Darlington Transistor User's Manual

Summary

This datasheet provides comprehensive technical specifications and application data for the KSH122 NPN Silicon Darlington Transistor. Designed for high DC current gain in surface mount applications (D-PAK/I-PAK), this power transistor is electro-similar to popular TIP122 components, handling up to 8A maximum collector current. Included guides cover absolute ratings, electrical characteristics, thermal performance curves, and detailed package dimensions. This manual is essential for electrical engineers designing robust high-power switching circuits requiring reliable, space-saving semiconductor components.

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Fairchild KSH122 NPN Silicon Darlington Transistor User's Manual - Page 1

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Page 1 Text Content

KSH122

D-PAK for Surface Mount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, “ - I “ Suffix)

D-PAK I-PAK1

Electrically Similar to Popular TIP122

Complement to KSH127 1.Base 2.Collector 3.Emitter

NPN Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units VCBO Collector-Base Voltage

VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) ICP Collector Current (Pulse) 16 A

IB Base Current m A

PC Collector Dissipation (TC=25°C)

Collector Dissipation (Ta=25°C) 1.75

TJ Junction Temperature °C TSTG Storage Temperature - 65 ~ 150 °C

Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units VCEO(sus) *Collector-Emitter Sustaining Voltage IC = 30m A, IB = 0

ICEO Collector Cut-off Current VCE = 50V, IB =0 µA ICBO Collector Cut-off Current VCB = 100V, IE = 0 µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 m A h FE *DC Current Gain VCE = 4V, IC = 4A 12K

VCE = 4V, VEB = 8A

VCE(sat) *Collector-Emitter Saturation Voltage IC = 4A, IB = 16m A

IC = 8A, IB = 80m A

VBE(sat) *Base-Emitter Saturation Voltage IC = 8A, IB = 80m A 4.5 VBE(on) *Base-Emitter On Voltage VCE = 4V, IC = 4A 2.8

VCB = 10V, IE = 0 p F

Cob Output Capacitance

f= 0.1MHz

* Pulse Test: PW≤300µs, Duty Cycle≤2%

Page Summary Contents For Fairchild KSH122 NPN Silicon Darlington Transistor User's Manual

Page 1 KSH122 D-PAK for Surface Mount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, “ - I “ Suffix) D-PAK I-PAK...

Page 2 SH Typical Characteristics ,t [µ s] , T FF IM ob [p F] , C AP AC IT AN E, EN AI VCE = 4V IC = 250 IB VBE(sat) VCE(sat) IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figur...

Page 4 SH Package Dimensions D-PAK MAX0.96 0.76 ±0.10 2.30TYP 2.30TYP [2.30±0.20] [2.30±0.20] 2.30 ±0.20 (0 6.60 ±0.20 .7 0) (5.34) (0 .1 0) (3 .0 5) (0 .9 0) (5.04) IN 0. (1 .0 (1.50) 0) (2XR0.25) Dimension...

Page 6 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT...

Manual Details

Brand	Fairchild
Pages	6
File Size	57.22 KB
Published	June 01, 2026

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Frequently Asked Questions

What is the functional capability of this transistor?

It features a high DC Current Gain, which tests at hFE = 1000 under specific conditions.

Are there any restrictions on using this component in medical devices?

Fairchild products are not authorized for use as critical components in life support systems without expressing written approval.

What surface mount packages is the transistor available in?

The KSH122 is offered in both D-PAK and I-PAK formats for surface mounting applications.