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FAIRCHILD TN6725A NPN Darlington Transistor User's Manual

Summary

This high-performance NPN Darlington Transistor is engineered specifically for power electronic applications requiring exceptional current gain up to 1A. This comprehensive datasheet provides electrical engineers and circuit designers with critical technical specifications, including absolute maximum ratings, detailed thermal characteristics, and small signal parameters. Use this manual to ensure optimal design implementation and reliable performance in complex high-current circuits.

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Discrete Power & Signal Technologies

TN6725A

C B E TO-226

NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1A. Sourced from Process 05. See MPSA14 for characteristics.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Units Value Parameter Symbol V50Collector-Emitter Voltage VCES

V60Collector-Base Voltage VCBO

V12Emitter-Base Voltage VEBO

A1.2Collector Current - Continuous IC

°C-55 to +150Operating and Storage Junction Temperature Range TJ, Tstg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted

Characteristic Symbol Units

TN6725A

Total Device Dissipation

Derate above 25°C m W/°C

°C/W50Thermal Resistance, Junction to Case RθJC

°C/W125Thermal Resistance, Junction to Ambient RθJA

 1997 Fairchild Semiconductor Corporation

TN6725A, Rev A

Page Summary Contents For FAIRCHILD TN6725A NPN Darlington Transistor User's Manual

Page 1 Discrete Power & Signal Technologies TN6725A C B E TO-226 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1A. Sour...
Page 2 6725A NPN Darlington Transistor (continued) Electrical Characteristics TA = 25°C unless otherwise noted Units Max Min Test Conditions Parameter Symbol OFF CHARACTERISTICS V50IC = 1 m A Collector-Emitt...
Page 3 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST...

Manual Details

Brand Fairchild
Pages 3
File Size 35.19 KB
Published July 12, 2026
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Frequently Asked Questions

What is the maximum junction temperature range for this device?

The operating junction temperature range is guaranteed from -55°C to +150°C.

How should I calculate power derating above 25°C?

Total Device Dissipation of 1W must be derated at a rate of 8mW/°C above the standard 25°C junction temperature.

What type of applications is this transistor specialized for?

It is designed for applications that require extremely high current gain specifically at collector currents up to 1A.

Can I use this product in critical life support systems?

The device requires the express written approval of Fairchild Semiconductor Corporation for use as a critical component in life-support devices or systems.