Fairchild BSP52 NPN Darlington Transistor User's Guide

BSP52

NPN Darlington Transistor This device is designed for applications requiring extremly high current gain at collector currents to 500m A. Sourced from process 03.

SOT-2231

1. Base 2. Collector 3. Emitter

Absolute Maximum Ratings* TA=25°C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage

VCBO Collector-Base Voltage

VEBO Emitter-Base Voltage

IC Collector Current - Continuous m A TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ +150 °C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics

V(BR)CBO Collector-Base Breakdown Voltage IC = 100µA, IE = 0 V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 ICES Collector Cutoff Current VCE = 80V, VBE = 0 µA IEBO Emitter Cutoff Current VEB = 4.0V, IC = 0 µA

On Characteristics h FE DC Current Gain IC = 150m A, VCE = 10V

IC = 500m A, VCE = 10V

VCE(sat) Collector-Emitter Saturation Voltage IC = 500m A, IB = 0.5m A 1.3 VBE(sat) Base-Emitter Saturation Voltage IC = 500m A, IB = 0.5m A 1.9

Thermal Characteristics TA=25°C unless otherwise noted Symbol Parameter Max. Units PD Total Device Dissipation m W

Derate above 25°C 8.0 m W/°C RθJA Thermal Resistance, Junction to Ambient °C/W

©2002 Fairchild Semiconductor Corporation Rev. A, June 2002