Fairchild BC517 NPN Darlington Transistor User Guide

517 N PN arlington Transistor

January 2005

BC517 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from process 05.

TO-921

1. Collector 2. Base 3. Emitter

Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage

VCBO Collector-Base Voltage

VEBO Emitter-Base Voltage

IC Collector Current - Continuous 1.2

TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C

* These ratings are limiting values above which the serviceability of any semiconductor device may impaired.

NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics Ta = 25°C unless otherwise noted Symbol Parameter Conditions Min. Max Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 2.0m A, IB = 0 V(BR)CBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0

V(BR)EBO Emitter-Base Breakdown Voltage IE = 100n A, IC = 0

ICBO Collector Cut-off Current VCB = 30V, IE = 0 n A

On Characteristics * h FE DC Current Gain VCE = 2.0V, IC = 20m A 30,000

VCE(sat) Collector-Emitter Saturation Voltage IC = 100m A, IB = 0.1m A

VBE(on) Base-Emitter On Voltage IC = 10m A, VCE = 5.0V 1.4

Thermal Characteristics Ta = 25°C unless otherwise noted Symbol Parameter Value Units PD Total Device Dissipation m W

Derate above 25°C 5.0 m W/°C

RθJC Thermal Resistance, Junction to Case 83.3 °C/W

RθJA Thermal Resistance, Junction to Ambient °C/W

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com BC517 Rev. A