Fairchild FDG315N Technical Data Sheet (TDS)

FD 315N

July 2000

FDG315N N-Channel Logic Level Power Trench MOSFET

General Description Features

This N-Channel Logic Level MOSFET is produced using

2 A, 30 V. RDS(ON) = 0.12 Ω @ VGS = 10 V

Fairchild Semiconductor's advanced Power Trench

process that has been especially tailored to minimize RDS(ON) = 0.16 Ω @ VGS = 4.5 V.

on-state resistance and yet maintain superior switching performance. Low gate charge (2.1n C typical).

These devices are well suited for low voltage and

High performance trench technology for extremely low

battery powered applications where low in-line power

RDS(ON).

loss and fast switching are required.

Compact industry standard SC70-6 surface mount

Applications

package.

DC/DC converter Load switch Power Management

SC70-6

Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage

VGSS Gate-Source Voltage ±20

ID Drain Current - Continuous (Note 1a)

- Pulsed

Power Dissipation for Single Operation (Note 1a) 0.75 WPD (Note 1b) 0.48

TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics

RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) °C/W

Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity

.15 FDG315N 7’’ 8mm 3000 units

2000 Fairchild Semiconductor International FDG315N Rev. C