Fairchild FQAF11N90 Technical Data Sheet (1)(1)

September 2000

QFETTM

FQAF11N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.2A, 900V, RDS(on) = 0.96 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 72 n C) planar stripe, DMOS technology. Low Crss ( typical 30 p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the

Improved dv/dt capability

avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

TO-3PF

FQAF Series G

Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQAF11N90 Units VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) 7.2

- Continuous (TC = 100°C) 4.55

IDM Drain Current - Pulsed (Note 1) 28.8 VGSS Gate-Source Voltage ± 30 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) 7.2 EAR Repetitive Avalanche Energy (Note 1) m J

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns

PD Power Dissipation (TC = 25°C)

- Derate above 25°C 0.96 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

TL °C

1/8" from case for 5 seconds

Thermal Characteristics Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case 1.04 °C/W RθJA Thermal Resistance, Junction-to-Ambient °C/W

©2000 Fairchild Semiconductor International Rev. A, September 2000