Fairchild FQPF5P10 Product Specifications (1)(1)
Summary
This high-performance P-Channel MOSFET (FQPF5P10) utilizes advanced planar stripe DMOS technology, designed for superior switching capability and reliability in power electronics. Featuring low on-state resistance, fast switching speeds, and robust 175°C operation, this component excels in demanding applications such as audio amplifiers, high-efficiency DC/DC converters, and DC motor control. The detailed datasheet provides engineers with comprehensive technical specifications, including absolute maximum ratings, thermal characteristics, dynamic performance graphs, and switching parameters, ensuring reliable circuit design for low voltage power systems.
Page 1 Text Content
FQ PF5P10QFET
FQPF5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -2.9A, -100V, RDS(on) = 1.05Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 6.3 n C) planar stripe, DMOS technology. Low Crss ( typical 18 p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the
Improved dv/dt capability
avalanche and commutation mode. These devices are well
175°C maximum junction temperature rating
suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
TO-220F
FQPF Series G
Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF5P10 Units VDSS Drain-Source Voltage -100 ID Drain Current - Continuous (TC = 25°C) -2.9
- Continuous (TC = 100°C) -2.08
IDM Drain Current - Pulsed (Note 1) -11.6 VGSS Gate-Source Voltage ± 30 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) -2.9 EAR Repetitive Avalanche Energy (Note 1) 2.3 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) -6.0 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C 0.15 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
TL °C
1/8" from case for 5 seconds
Thermal Characteristics Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case 6.52 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W
©2002 Fairchild Semiconductor Corporation Rev. B, August 2002
Page Summary Contents For Fairchild FQPF5P10 Product Specifications (1)(1)
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 675.60 KB |
| Published | July 07, 2026 |
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Frequently Asked Questions
What are suitable applications for this P-Channel MOSFET?
It is well suited for low voltage systems like audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
What is the specified On-Resistance (R_DS(on))?
The typical static drain-source on-resistance is rated between 0.82 Ω and 1.05 Ω at -10V.
How must power dissipation be derated if operating above 25°C?
Above 25°C, the power dissipation rating must be derated by a factor of 0.15 W/°C.
What is the safe operating temperature range for this component?
The specified operating temperature range for the device is from -55 to +175 °C.
Can Fairchild products be used in life support devices without prior approval?
No, usage in life support systems requires the express written approval of Fairchild Semiconductor Corporation.