Fairchild FQPF6N90 Technical Specifications (1)

FQ PF6N

FQPF6N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.4A, 900V, RDS(on) = 1.9Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 40 n C) planar stripe, DMOS technology. Low Crss ( typical 17 p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the

Improved dv/dt capability

avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

TO-220F

FQPF Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF6N90 Units VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) 3.4

- Continuous (TC = 100°C) 2.1

IDM Drain Current - Pulsed (Note 1) 13.6 VGSS Gate-Source Voltage ± 30 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) 3.4 EAR Repetitive Avalanche Energy (Note 1) 5.6 m J

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns

PD Power Dissipation (TC = 25°C)

- Derate above 25°C 0.45 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

TL °C

1/8" from case for 5 seconds

Thermal Characteristics Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case 2.25 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W

©2002 Fairchild Semiconductor Corporation Rev. B, December 2002