FAIRCHILD FQPF17P06 Technical Specifications Sheet (1)(1)
Summary
This high-performance FQPF17P06 P-Channel MOSFET utilizes advanced DMOS planar stripe technology to deliver superior power efficiency and extremely fast switching capabilities. Engineered with low on-resistance and high reliability, it is ideally suited for critical low voltage applications such as automotive electronics, DC/DC converters, and portable battery management systems. The accompanying manual provides comprehensive technical specifications, detailing absolute maximum ratings, dynamic parameters, and thermal performance required for professional power circuit design.
Page 1 Text Content
FQ PF17P06
May 2001
FQPF17P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -12A, -60V, RDS(on) = 0.12Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 21 n C) planar stripe, DMOS technology. Low Crss ( typical 80 p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand a high energy pulse in the
Improved dv/dt capability
avalanche and commutation modes. These devices are
175°C maximum junction temperature rating
well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
SD TO-220F
FQPF Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF17P06 Units VDSS Drain-Source Voltage -60 ID Drain Current - Continuous (TC = 25°C) -12
- Continuous (TC = 100°C) -8.5
IDM Drain Current - Pulsed (Note 1) -48 VGSS Gate-Source Voltage ± 25 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) -12 EAR Repetitive Avalanche Energy (Note 1) 3.9 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C 0.25 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
TL °C
1/8" from case for 5 seconds
Thermal Characteristics Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case 3.85 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W
©2001 Fairchild Semiconductor Corporation Rev. A2. May 2001
Page Summary Contents For FAIRCHILD FQPF17P06 Technical Specifications Sheet (1)(1)
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 691.13 KB |
| Published | July 12, 2026 |
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Frequently Asked Questions
What types of low voltage applications is this MOSFET suited for?
It is well suited for automotive, DC/DC converters, and high efficiency switching in portable or battery operated products.
How do I calculate power dissipation if the operating temperature exceeds 25°C?
You must derate above 25°C using a factor of 0.25 W/°C for each degree Celsius increase.
What is the maximum continuous drain current (Id) at standard room temperature (25°C)?
The continuous drain current rating (Id) at 25°C is -12 A.
What is the overall operating temperature range for this component?
The device supports an operating and storage temperature range of -55 to +175 °C.