FAIRCHILD FQPF9N08 80V N-Channel MOSFET Specifications (1)(1)

8QFETTM

December 2000

FQPF9N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.0A, 80V, RDS(on) = 0.21Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 5.9 n C) planar stripe, DMOS technology. Low Crss ( typical 13 p F) This advanced technology is especially tailored to minimize Fast switching on-state resistance, provide superior switching 100% avalanche tested performance, and withstand a high energy pulse in the

Improved dv/dt capability

avalanche and commutation modes These devices are well

175°C maximum junction temperature rating

suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.

SD TO-220F

FQPF Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF9N08 Units VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) 7.0

- Continuous (TC = 100°C) 4.95

IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage ± 25 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) 7.0 EAR Repetitive Avalanche Energy (Note 1) 2.3 m J

dv/dt Peak Diode Recovery dv/dt (Note 3) 6.5 V/ns

PD Power Dissipation (TC = 25°C)

- Derate above 25°C 0.15 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C

Maximum lead temperature for soldering purposes,

TL °C

1/8” from case for 5 seconds

Thermal Characteristics Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case 6.52 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W

©2000 Fairchild Semiconductor International Rev. A2, December 2000