FAIRCHILD FQPF12N20L 200V LOGIC N-Channel MOSFET Data Manual (1), (1)
Summary
Optimize your power electronics with this N-Channel MOSFET, featuring industry-leading characteristics like low $\text{R}_{\text{DS}(\text{on})}$ and rapid switching capabilities. Designed for high-efficiency performance, it is best suited for critical applications including DC/DC converters, motor control systems, and switch mode power supplies. This comprehensive technical manual provides detailed specifications, absolute maximum ratings, voltage transfer curves, and dynamic switching data necessary for engineers designing robust and reliable power circuits.
Page 1 Text Content
2N LFQPF12N20L
February 2001
200V LOGIC N-Channel MOSFET
General Description Features These N-Channel enhancement mode power field effect 8.2A, 200V, RDS(on) = 0.28Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 16 n C) planar stripe, DMOS technology. Low Crss ( typical 17 p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the
Improved dv/dt capability
avalanche and commutation mode. These devices are well
Low level gate drive requirement allowing direct
suited for high efficiency switching DC/DC converters,
opration from logic drivers
switch mode power supply, motor control.
SD TO-220F
FQPF Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF12N20L Units VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) 8.2
- Continuous (TC = 100°C) 5.2
IDM Drain Current - Pulsed (Note 1) 32.8 VGSS Gate-Source Voltage ± 20 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) 8.2 EAR Repetitive Avalanche Energy (Note 1) 4.5 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C 0.36 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL °C
1/8" from case for 5 seconds
Thermal Characteristics Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case 2.78 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W
©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
Page Summary Contents For FAIRCHILD FQPF12N20L 200V LOGIC N-Channel MOSFET Data Manual (1), (1)
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 615.40 KB |
| Published | July 10, 2026 |
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Frequently Asked Questions
What are the key performance advantages of this N-Channel MOSFET?
It features low gate charge, fast switching ability, and improved dv/dt capability for superior operation.
How much is the maximum continuous drain current at 25°C?
The device has a continuous drain current (IC) rating of 8.2 A.
If I operate this component above 25°C, what should be done?
Power dissipation must be derated using a factor of 0.36 W/°C for temperatures above 25°C.
Is this MOSFET authorized for use in critical life support systems?
No, Fairchild's products are only authorized for life support applications with their express written approval.