Fairchild FDN5618P 60V P-Channel Logic Level PowerTrench MOSFET User Manual (1)

FD 5618P

July 2000 PRELIMINARY

FDN5618P 60V P-Channel Logic Level Power Trench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high

• –1.25 A, –60 V. RDS(ON) = 0.170 Ω @ VGS = –10 V

voltage Power Trench process. It has been optimized for

RDS(ON) = 0.230 Ω @ VGS = –4.5 V

power management applications.

• Fast switching speed

Applications

• DC-DC converters • High performance trench technology for extremely low RDS(ON)

• Load switch • Power management

Super SOT -3TM

Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –60 VGSS Gate-Source Voltage ±20 ID Drain Current – Continuous (Note 1a) –1.25

– Pulsed –10

Maximum Power Dissipation (Note 1a) 0.5

(Note 1b) 0.46

TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics

RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) °C/W

Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity

FDN5618P 7’’ 8mm 3000 units

2000 Fairchild Semiconductor Corporation FDN5618P Rev B(W)