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Fairchild FDD5670 60V N-Channel PowerTrench MOSFET Data Handbook

Summary

This high-performance N-Channel PowerTrench MOSFET is engineered for maximum efficiency in demanding power electronics applications. Featuring extremely low RDS(ON), minimal gate charge, and fast switching capabilities, it is ideal for optimizing DC/DC converters and motor drives. The manual provides comprehensive technical specifications, including absolute maximum ratings, thermal properties ($\theta_{JC}$/$\theta_{JA}$), electrical characteristics, and detailed application data necessary for power engineers designing reliable high-power systems.

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Page 1 Text Content

November 2011

FDD5670 60V N-Channel Power Trench® MOSFET General Description Features This N-Channel MOSFET has been designed

• 52 A, 60 V RDS(ON) = 15 mΩ @ VGS = 10 V

specifically to improve the overall efficiency of DC/DC

RDS(ON) = 18 mΩ @ VGS = 6 V

converters using either synchronous or conventional switching PWM controllers. It has been optimized for

low gate charge, low RDS( ON) and fast switching speed. • Low gate charge

extremely low RDS(ON) in a small package.

• Fast switching

Applications

• High performance trench technology for extremely

• DC/DC converter

low RDS(ON)

• Motor drives

TO-252

Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage VGSS Gate-Source Voltage ±20 ID Drain Current – Continuous (Note 3)

– Pulsed (Note 1a)

PD Power Dissipation for Single Operation (Note 1)

(Note 1a) 3.8 (Note 1b) 1.6

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 °C

Thermal Characteristics

RθJC Thermal Resistance, Junction-to-Case (Note 1) 1.8 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) °C/W

Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD5670 FDD5670 13’’ 16mm 2500 units

©2011 Fairchild Semiconductor Corporation FDD5670 Rev B2

Page Summary Contents For Fairchild FDD5670 60V N-Channel PowerTrench MOSFET Data Handbook

Page 1 November 2011 FDD5670 60V N-Channel Power Trench® MOSFET General Description Features This N-Channel MOSFET has been designed • 52 A, 60 V RDS(ON) = 15 mΩ @ VGS = 10 V specifically to improve the over...
Page 2 FD Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) WDSS Drain-Source Avalanche Energy Single Puls...
Page 3 Typical Characteristics , D IN EN (A , D IN EN (A S( LI ZE IN -S -R ES IS TA VGS = 10V 6.0V 1.8 VGS = 4.0V ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figu...
Page 4 Typical Characteristics , D IN EN (A S, TE -S VO LT (V r(t LI ZE FF EC TI VE TR SI EN TH ER ES IS TA VDS = 10V f = 1MHz ID = 11A 20V VGS = 0 V Qg, GATE CHARGE (n C) VDS, DRAIN TO SOURCE VOLTAGE (V) Fi...
Page 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive lis...

Manual Details

Brand Fairchild
Pages 5
File Size 139.36 KB
Published July 10, 2026
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Frequently Asked Questions

What types of systems is this MOSFET optimized for?

It is designed to improve overall efficiency in DC/DC converters using optimal switching PWM controllers.

What should I do to ensure proper heat dissipation when installing it?

Mounting on a 1in pad of 2 oz copper recommended; thermal resistance depends on user board design.

How can I guarantee that I am purchasing genuine components?

Purchase parts directly from Fairchild or authorized distributors listed on their website to ensure full traceability and warranty support.

What are the maximum operational voltage limits?

The absolute maximum drain-source voltage ($V_{DSS}$) is 60 V.