Fairchild FDD6630A 30V N-Channel PowerTrench MOSFET Data Sheet

November 2011

FDD6630A 30V N-Channel Power Trench MOSFET General Description Features This N-Channel MOSFET has been designed

• 21 A, 30 V RDS(ON) = 35 mΩ @ VGS = 10 V

specifically to improve the overall efficiency of DC/DC

RDS(ON) = 50 mΩ @ VGS = 4.5 V

converters using either synchronous or conventional switching PWM controllers. It has been optimized for

• Low gate charge (5n C typical)

low gate charge, low RDS( ON) and fast switching speed.

• Fast switching

Applications

• High performance trench technology for extremely

• DC/DC converter

low RDS(ON)

• Motor drives

TO-252

Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 3) 21 A – Pulsed (Note 1a) 100 PD Power Dissipation (Note 1) 28

(Note 1a) 3.2 (Note 1b) 1.3

TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C

Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 4.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W

Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD6630A FDD6630A 13’’ 16mm 2500 units

2011 Fairchild Semiconductor Corporation FDD6630A Rev D1