Fairchild FDD6612A FDU6612A 30V N-Channel PowerTrench MOSFET Data Manual

February 2004

FDD6612A/FDU6612A 30V N-Channel Power Trench MOSFET

General Description Features

This N-Channel MOSFET has been designed

• 30 A, 30 V RDS(ON) = 20 mΩ @ VGS = 10 V

specifically to improve the overall efficiency of DC/DC

RDS(ON) = 28 mΩ @ VGS = 4.5 V

converters using either synchronous or conventional switching PWM controllers. It has been optimized for

• Low gate charge

low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.

• Fast Switching

Applications

• High performance trench technology for extremely

• DC/DC converter

low RDS(ON)

• Motor Drives

I-PAK (TO-251AA)

TO-252D-PAK (TO-252)

Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage VGSS Gate-Source Voltage ±20 ID Continuous Drain Current @TC=25°C (Note 3)

@TA=25°C (Note 1a) 9.5 Pulsed (Note 1a)

PD Power Dissipation @TC=25°C (Note 1)

@TA=25°C (Note 1a) 2.8 @TA=25°C (Note 1b) 1.3

TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C

Thermal Characteristics

RθJC Thermal Resistance, Junction-to-Case (Note 1) 3.9 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) °C/W

Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6612A FDD6612A D-PAK (TO-252) 13’’ 12mm 2500 units FDU6612A FDU6612A I-PAK (TO-251) Tube N/A

2004 Fairchild Semiconductor Corporation FDD6612A/FDU6612A Rev E(W)