Fairchild FDN372S 30V N-Channel PowerTrench SyncFET User Manual

FD 372S September 2002

FDN372S 30V N-Channel Power Trench Sync FET™ General Description Features The FDN372S is designed to replace a single MOSFET

• 2.6 A, 30 V. RDS(ON) = 40 mΩ @ VGS = 10 V

and Schottky diode, used in synchronous DC-DC

RDS(ON) = 50 mΩ @ VGS = 4.5 V

power supplies, with a single integrated component. This 30V MOSFET is designed to maximize power conversion efficiency with low Rds(on) and low gate charge. The FDN372S includes an integrated Schottky • Low gate charge diode using Fairchild Semiconductor’s monolithic Sync FET process, making it ideal as the low side

• Fast switching speed

switch in a synchronous converter.

• High performance trench technology for extremely

Applications

low RDS(ON)

• DC-DC Converter • Motor Drives

Super SOT -3TM

Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ± 16 V ID Drain Current – Continuous (Note 1a) 2.6 A – Pulsed 10

Power Dissipation for Single Operation (Note 1a) 0.5 PD (Note 1b) 0.46

TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W

Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 372 FDN372S 7’’ 8mm 3000 units

2002 Fairchild Semiconductor Corporation FDN372S Rev C(W)