Fairchild FDP038AN06A0 and FDI038AN06A0 N-Channel PowerTrench MOSFET Datasheet Manual

August 2002

FDP038AN06A0 / FDI038AN06A0 N-Channel Power Trench® MOSFET 60V, 80A, 3.8mΩ Features Applications r DS(ON) = 3.5mΩ (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 95n C (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC converters and Off-line UPS Qualified to AEC Q101 Distributed Power Architectures and VRMs

Primary Switch for 12V and 24V systems

Formerly developmental type 82584

SOURCE DRAIN

DRAIN

SOURCE(FLANGE)

DRAIN GATE

TO-220AB TO-262AB SDRAIN

(FLANGE)

FDP SERIES FDI SERIES

MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage

VGS Gate to Source Voltage ±20 Drain Current

AContinuous (TC < 151o C, VGS = 10V)

Continuous (Tamb = 25o C, VGS = 10V, with RθJA = 62o C/W) Pulsed Figure 4 EAS Single Pulse Avalanche Energy (Note 1) m J Power dissipation

Derate above 25o C 2.07 W/o C

TJ, TSTG Operating and Storage Temperature -55 to 175

Thermal Characteristics

RθJC Thermal Resistance Junction to Case TO-220, TO-262 0.48

RθJA Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2)

This product has been designed to meet the extreme test conditions and environment demanded by the automotive

industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality

systems certification.

©2002 Fairchild Semiconductor Corporation FDP038AN06A0 / FDI038AN06A0 Rev. A1