Fairchild FDD5680 N-Channel, PowerTrench MOSFET Data Handbook

July 2000

FDD5680 N-Channel, Power Trench MOSFET

General Description Features

This N-Channel MOSFET is produced using Fairchild

38 A, 60 V. RDS(on) = 0.021 Ω @ VGS = 10 V

Semiconductor's advanced Power Trench process that has

RDS(on) = 0.025 Ω @ VGS = 6 V.

been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior

Low gate charge (33n C typical).

switching performance.

Fast switching speed.

Applications

High performance trench technology for extremely DC/DC converter low RDS(on).

Motor drives

TO-252

Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage VGSS Gate-Source Voltage ±20 ID Maximun Drain Current - Continuous (Note 1)

(Note 1a)

Maximum Drain Current - Pulsed

PD Maximum Power Dissipation @ TC = 25o C (Note 1)

TA = 25o C (Note 1a) 2.8

TA = 25o C (Note 1b) 1.3

TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics RθJC Thermal Resistance, Junction-to- Case (Note 1) 2.1 °C/W RθJA Thermal Resistance, Junction-to- Ambient (Note 1b) °C/W

Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD5680 FDD5680 13’’ 16mm

2000 Fairchild Semiconductor International FDD5680, Rev. C