Fairchild FDD6530A 20V N-Channel PowerTrench MOSFET Data Handbook

FD 6530A

July 2001

FDD6530A 20V N-Channel Power Trench MOSFET

General Description Features

This N-Channel MOSFET has been designed

• 21 A, 20 V RDS(ON) = 32 mΩ @ VGS = 4.5 V

specifically to improve the overall efficiency of DC/DC

RDS(ON) = 47 mΩ @ VGS = 2.5 V

converters using either synchronous or conventional switching PWM controllers. It has been optimized for

low gate charge, low RDS( ON) and fast switching speed. • Low gate charge (6.5 n C typical)

• Fast switching

Applications

• High performance trench technology for extremely

• DC/DC converter

low RDS(ON)

• Motor drives

TO-252

Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage VGSS Gate-Source Voltage ±8 ID Drain Current – Continuous (Note 3)

– Pulsed (Note 1a)

PD Power Dissipation (Note 1)

(Note 1a) 3.3 (Note 1b) 1.6

TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C

Thermal Characteristics

RθJC Thermal Resistance, Junction-to-Case (Note 1) 4.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) °C/W

Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD6530A FDD6530A 13’’ 16mm 2500 units

2001 Fairchild Semiconductor Corporation FDD6630A Rev C (W)