FAIRCHILD FDG6332C 20V N & P-Channel PowerTrench MOSFETs Data Handbook

September 2003

FDG6332C 20V N & P-Channel Power Trench MOSFETs General Description Features The N & P-Channel MOSFETs are produced using

• Q1 0.7 A, 20V. RDS(ON) = 300 mΩ @ VGS = 4.5 V

Fairchild Semiconductor’s advanced Power Trench

RDS(ON) = 400 mΩ @ VGS = 2.5 V

process that has been especially tailored to minimize on-state resistance and yet maintain superior

switching performance. • Q2 –0.6 A, –20V. RDS(ON) = 420 mΩ @ VGS = –4.5 V

RDS(ON) = 630 mΩ @ VGS = –2.5 V

These devices have been designed to offer exceptional power dissipation in a very small footprint

• Low gate charge

for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.

• High performance trench technology for extremely low RDS(ON)

Applications

• DC/DC converter • SC70-6 package: small footprint (51% smaller than • Load switch SSOT-6); low profile (1mm thick)

• LCD display inverter

Pin 1

SC70-6

Complementary

Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Q1 Q2 Units VDSS Drain-Source Voltage –20 VGSS Gate-Source Voltage ±12 ±12 ID Drain Current – Continuous (Note 1) 0.7 –0.6

– Pulsed 2.1 –2

PD Power Dissipation for Single Operation (Note 1) 0.3

TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics

RθJA Thermal Resistance, Junction-to-Ambient (Note 1) °C/W

Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity

.32 FDG6332C 7’’ 8mm 3000 units

2003 Fairchild Semiconductor Corporation FDG6332C Rev C2 (W)