Fairchild FDG6335N 20v N-Channel PowerTrench MOSFET Data Manual

October 2001

FDG6335N 20V N-Channel Power Trench MOSFET General Description Features This N-Channel MOSFET has been designed

• 0.7 A, 20 V. RDS(ON) = 300 mΩ @ VGS = 4.5 V

specifically to improve the overall efficiency of DC/DC

RDS(ON) = 400 mΩ @ VGS = 2.5 V

converters using either synchronous or conventional switching PWM controllers. It has been optimized use

• Low gate charge (1.1 n C typical)

in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.

• High performance trench technology for extremely Applications low RDS(ON)

• Compact industry standard SC70-6 surface mount

• DC/DC converter

package

• Power management • Loadswitch

1 or 4 6 or 3

2 or 5 5 or 2

Pin 1 3 or 6 4 or 1

SC70-6

Dual N-Channel

The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.

Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage VGSS Gate-Source Voltage ± 12 ID Drain Current – Continuous (Note 1) 0.7

– Pulsed 2.1

PD Power Dissipation for Single Operation (Note 1) 0.3 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) °C/W

Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity

.35 FDG6335N 7’’ 8mm 3000 units

2001 Fairchild Semiconductor Corporation FDG6335N Rev C (W)