Fairchild FDD5612 60V N-Channel PowerTrench MOSFET Data Sheet

March 2001

FDD5612 60V N-Channel Power Trench MOSFET General Description This N-Channel MOSFET has been designed Features specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional

• 18 A, 60 V. RDS(ON) = 55 mΩ @ VGS = 10 V

switching PWM controllers.

RDS(ON) = 64 mΩ @ VGS = 6 V

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable • Optimized for use in high frequency DC/DC RDS(ON) specifications. The result is a MOSFET that is

converters.

easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall

• Low gade charge.

efficiency.

• Very fast switching.

TO-252

Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1) 18 A (Note 1a) 5.4 Drain Current – Pulsed 100 PD Maximum Power Dissipation (Note 1) 42

(Note 1a) 3.8 (Note 1b) 1.6

TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C

Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 3.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W (Note 1b) 96

Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD5612 FDD5612 13’’ 16mm 2500 units

2001 Fairchild Semiconductor Corporation FDD5612 REV. C1(W)