Fairchild Semiconductor FQA170N06 60V N-Channel MOSFET Data Sheet

FQ 170N

May 2001

FQA170N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 170A, 60V, RDS(on) = 0.0056Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 220 n C) planar stripe, DMOS technology. Low Crss ( typical 620 p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the

Improved dv/dt capability

avalanche and commutation mode. These devices are well

175°C maximum junction temperature rating

suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.

TO-3P

FQA Series G

Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQA170N06 Units VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C)

- Continuous (TC = 100°C)

IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage ± 25 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) EAR Repetitive Avalanche Energy (Note 1) 37.5 m J

dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns

PD Power Dissipation (TC = 25°C)

- Derate above 25°C 2.5 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C

Maximum lead temperature for soldering purposes,

TL °C

1/8" from case for 5 seconds

Thermal Characteristics Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case 0.4 °C/W RθCS Thermal Resistance, Case-to-Sink 0.24 °C/W RθJA Thermal Resistance, Junction-to-Ambient °C/W

©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001