Fairchild FQPF11P06 60V P-Channel MOSFET Data Sheet

FQ PF11P06

May 2001

FQPF11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -8.6A, -60V, RDS(on) = 0.175Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 13 n C) planar stripe, DMOS technology. Low Crss ( typical 45 p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand a high energy pulse in the

Improved dv/dt capability

avalanche and commutation modes. These devices are

175°C maximum junction temperature rating

well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

SD TO-220F

FQPF Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF11P06 Units VDSS Drain-Source Voltage -60 ID Drain Current - Continuous (TC = 25°C) -8.6

- Continuous (TC = 100°C) -6.08

IDM Drain Current - Pulsed (Note 1) -34.4 VGSS Gate-Source Voltage ± 25 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) -8.6 EAR Repetitive Avalanche Energy (Note 1) 3.0 m J

dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns

PD Power Dissipation (TC = 25°C)

- Derate above 25°C 0.2 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C

Maximum lead temperature for soldering purposes,

TL °C

1/8" from case for 5 seconds

Thermal Characteristics Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case 5.0 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W

©2001 Fairchild Semiconductor Corporation Rev. A4. May 2001