Fairchild FQPF12P10 100V P-Channel MOSFET Data Sheet

FQ PF12P10

FQPF12P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -8.2A, -100V, RDS(on) = 0.29Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 21 n C) planar stripe, DMOS technology. Low Crss ( typical 65 p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the

Improved dv/dt capability

avalanche and commutation mode. These devices are well

175°C maximum junction temperature rating

suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

TO-220F

FQPF Series G

Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF12P10 Units VDSS Drain-Source Voltage -100 ID Drain Current - Continuous (TC = 25°C) -8.2

- Continuous (TC = 100°C) -5.8

IDM Drain Current - Pulsed (Note 1) -32.8 VGSS Gate-Source Voltage ± 30 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) -8.2 EAR Repetitive Avalanche Energy (Note 1) 3.8 m J

dv/dt Peak Diode Recovery dv/dt (Note 3) -6.0 V/ns

PD Power Dissipation (TC = 25°C)

- Derate above 25°C 0.25 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C

Maximum lead temperature for soldering purposes,

TL °C

1/8! from case for 5 seconds

Thermal Characteristics Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case 3.95 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W

©2002 Fairchild Semiconductor Corporation Rev. B, August 2002