Fairchild FDS3601 100V Dual N-Channel PowerTrench MOSFET Data Manual

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FD S3601

August 2001

FDS3601 100V Dual N-Channel Power Trench MOSFET General Description Features These N-Channel MOSFETs have been designed

• 1.3 A, 100 V. RDS(ON) = 480 mΩ @ VGS = 10 V

specifically to improve the overall efficiency of DC/DC

RDS(ON) = 530 mΩ @ VGS = 6 V

converters using either synchronous or conventional switching PWM controllers.

• Fast switching speed

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable

• Low gate charge (3.7n C typical)

RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies),

• High performance trench technology for extremely

and DC/DC power supply designs with higher overall

efficiency. low RDS(ON)

• High power and current handling capability

Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage VGSS Gate-Source Voltage ±20 ID Drain Current – Continuous (Note 1a) 1.3

– Pulsed

PD Power Dissipation for Dual Operation

Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b) 1.0 (Note 1c) 0.9

TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C

Thermal Characteristics

RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) °C/W

Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS3601 FDS3601 13’’ 12mm 2500 units

2001 Fairchild Semiconductor Corporation FDS3601 Rev C(W)