Fairchild FDG327N 20V N-Channel PowerTrench MOSFET Data Sheet

FD 327N

October 2001

FDG327N 20V N-Channel Power Trench MOSFET General Description Features This N-Channel MOSFET has been designed

• 1.5 A, 20 V. RDS(ON) = 90 mΩ @ VGS = 4.5 V.

specifically to improve the overall efficiency of DC/DC

RDS(ON) = 100 mΩ @ VGS = 2.5 V

converters using either synchronous or conventional

switching PWM controllers. It has been optimized use RDS(ON) = 140 mΩ @ VGS = 1.8 V

in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package. • Fast switching speed

Applications • Low gate charge (4.5 n C typical)

• DC/DC converter

• High performance trench technology for extremely

• Power management

low RDS(ON)

• Load switch

• High power and current handling capability.

Pin 1

SC70-6

Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage VGSS Gate-Source Voltage ± 8 ID Drain Current – Continuous (Note 1a) 1.5

– Pulsed

Power Dissipation for Single Operation (Note 1a) 0.42 WPD

(Note 1b) 0.38

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics

RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) °C/W

Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity

.27 FDG327N 7’’ 8mm 3000 units

2001 Fairchild Semiconductor Corporation FDG327N Rev C (W)