Fairchild FDD2582 N-Channel PowerTrench MOSFET 150V, 21A, 66mOhm Data Sheet

September 2002

FDD2582 N-Channel Power Trench® MOSFET 150V, 21A, 66mΩ Features Applications r DS(ON) = 58mΩ (Typ.), VGS = 10V, ID = 7A DC/DC converters and Off-Line UPS Qg(tot) = 19n C (Typ.), VGS = 10V

Distributed Power Architectures and VRMs

Low Miller Charge

Primary Switch for 24V and 48V Systems

Low QRR Body Diode

High Voltage Synchronous Rectifier

UIS Capability (Single Pulse and Repetitive Pulse)

Direct Injection / Diesel Injection System

Qualified to AEC Q101

Formerly developmental type 82855 42V Automotive Load Control

Electronic Valve Train System

DRAIN (FLANGE)

SOURCE

TO-252AA FDD SERIES

MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage VGS Gate to Source Voltage ±20

Drain Current

AContinuous (TC = 25 o C, VGS = 10V)

Continuous (TC = 100 o C, VGS = 10V) Continuous (Tamb = 25o C, VGS = 10V, RθJA = 52o C/W) 3.7 Pulsed Figure 4

EAS Single Pulse Avalanche Energy (Note 1) m J

Power dissipation

Derate above 25o C 0.63 W/o C

TJ, TSTG Operating and Storage Temperature -55 to 175

Thermal Characteristics

RθJC Thermal Resistance Junction to Case TO-252 1.58

RθJA Thermal Resistance Junction to Ambient TO-252

RθJA Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

certification.

2002 Fairchild Semiconductor Corporation FDD2582 Rev. B