FAIRCHILD FQP45N15V2 FQPF45N15V2 150V N-Channel MOSFET User Manual

FQ P45N 15V2/FQ PF45N 15V2

QFET®

FQP45N15V2/FQPF45N15V2 150V N-Channel MOSFET

General Description Features These N-Channel enhancement mode power field effect 45A, 150V, RDS(on) = 0.04Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 72 n C) planar stripe, DMOS technology. Low Crss ( typical 135 p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the

Improved dv/dt capability

avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required.

TO-220 TO-220F

SD SD

FQPG FQPF

Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQP45N15V2 FQPF45N15V2 Units VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) 45 *

- Continuous (TC = 100°C) 31 *

IDM Drain Current - Pulsed (Note 1) 180 * VGSS Gate-Source Voltage ± 30 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) EAR Repetitive Avalanche Energy (Note 1) m J

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PD Power Dissipation (TC = 25°C)

- Derate above 25°C 1.47 0.44 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

TL °C

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature

Thermal Characteristics Symbol Parameter FQP45N15V2 FQPF45N15V2 Units RθJC Thermal Resistance, Junction-to-Case 0.68 2.25 °C/W RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

©2004 Fairchild Semiconductor Corporation Rev. A, October 2004