Fairchild FQPF2NA90 900V N-Channel MOSFET User Manual
Summary
Discover this high-performance N-Channel Power MOSFET, specifically engineered for demanding applications requiring stable, high-efficiency switch mode power supplies. This component features robust 900V handling and ultra-fast switching capabilities via advanced DMOS technology. The comprehensive datasheet provides power electronics engineers and designers with critical parameters—including detailed electrical characteristics, thermal data, and performance curves—necessary for reliable circuit design and implementation.
Page 1 Text Content
September 2000
QFETTM
FQPF2NA90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.7A, 900V, RDS(on) = 5.8 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 15 n C) planar stripe, DMOS technology. Low Crss ( typical 6.5 p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
SD TO-220F
FQPF Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol Parameter FQPF2NA90 Units
VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) 1.7
- Continuous (TC = 100°C) 1.07
IDM Drain Current - Pulsed (Note 1) 6.8 VGSS Gate-Source Voltage ± 30 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) 1.7 EAR Repetitive Avalanche Energy (Note 1) 3.9 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C 0.31 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL °C
1/8" from case for 5 seconds
Thermal Characteristics Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case 3.2 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W
©2000 Fairchild Semiconductor International Rev. A, September 2000
Page Summary Contents For Fairchild FQPF2NA90 900V N-Channel MOSFET User Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 690.92 KB |
| Published | July 16, 2026 |
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Frequently Asked Questions
What is the maximum continuous drain current at 25°C?
The maximum continuous drain current ($I_D$) is 1.7 A.
What are the operating and storage temperature limits for this MOSFET?
The device operates and stores within a range of -55 to +150 °C.
Can this FET be used as a critical component in life support devices?
No, Fairchild's products require expressive written approval and are not authorized for use in life support without it.
What is the low-side on-resistance ($R_{DS(on)}$) at 10V and 0.85A?
The static drain-source on-resistance ($R_{DS(on)}$) measured under these conditions is 5.8 Ω.