Fairchild FDP26N40 FDPF26N40 N-Channel MOSFET User Manual/Specifications
Summary
Engineered for robust power conversion, this N-Channel MOSFET is tailored for high-efficiency switched mode power supplies and active power applications that require superior performance. It features low on-state resistance and exceptional fast switching capabilities while withstanding high energy pulses. This technical guide provides comprehensive specifications covering maximum ratings (voltage/current), thermal management data, electrical parameters (e.g., $R_{DS(on)}$, $\text{V}_G\text{S}(\text{th})$), and dynamic switching characteristics, making it an essential resource for power electronics engineers and design specialists.
Page 1 Text Content
FD P26N 40 / FD PF26N 40 N -C hannel M SFET
February 2008
Uni FETTM
FDP26N40 / FDPF26N40
N-Channel MOSFET 400V, 26A, 0.16Ω Features Description RDS(on) = 0.13Ω ( Typ.)@ VGS = 10V, ID = 13A These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
Low gate charge ( Typ. 48n C)
stripe, DMOS technology.
Low Crss ( Typ. 30p F)
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
Fast switching
performance, and withstand high energy pluse in the avalanche
100% avalanche tested and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power
Improved dv/dt capability
factor correction.
Ro HS compliant
TO-220F
S DTO-220
SD FDPF Series G
FDP Series G
MOSFET Maximum Ratings TC = 25o C unless otherwise noted* Symbol Parameter FDP26N40 FDPF26N40 Units
VDSS Drain to Source Voltage VGSS Gate to Source Voltage ±30
-Continuous (TC = 25o C) 26*
ID Drain Current
-Continuous (TC = 100o C) 15.6 15.6*
IDM Drain Current - Pulsed (Note 1) 104* EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) EAR Repetitive Avalanche Energy (Note 1) 26.5 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
(TC = 25o C)
PD Power Dissipation
- Derate above 25o C 2.0 0.3 W/o C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 Maximum Lead Temperature for Soldering Purpose, o C
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics Symbol Parameter FDP26N40 FDPF26N40 Units RθJC Thermal Resistance, Junction to Case 0.5 3.0
o C/WRθCS
Thermal Resistance, Case to Sink Typ. 0.5 RθJA Thermal Resistance, Junction to Ambient 62.5 62.5
©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FDP26N40 / FDPF26N40 Rev. A
Page Summary Contents For Fairchild FDP26N40 FDPF26N40 N-Channel MOSFET User Manual/Specifications
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 9 |
| File Size | 552.16 KB |
| Published | July 07, 2026 |
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