Fairchild FQPF33N10L 100V Logic N-Channel MOSFET User Manual and Specifications
Summary
This high-performance N-Channel MOSFET is engineered for demanding power applications, featuring a 100V drain-source voltage and an 18A continuous current rating. Built with advanced DMOS technology, it provides superior switching speed and exceptional efficiency for reliable circuit operation in challenging environments. The accompanying manual offers comprehensive technical data, including electrical characteristics, detailed thermal limits, and absolute maximum ratings. This transistor is the ideal choice for engineers developing high-efficiency DC/DC converters and robust DC motor control systems.
Page 1 Text Content
September 2000
QFETTM
FQPF33N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 18A, 100V, RDS(on) = 0.052Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 30 n C) planar stripe, DMOS technology. Low Crss ( typical 70 p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the
Improved dv/dt capability
avalanche and commutation mode. These devices are well
175°C maximum junction temperature rating
suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.
SD TO-220F
FQPF Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF33N10L Units VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) 12.7
IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage ± 20 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) EAR Repetitive Avalanche Energy (Note 1) 4.1 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C 0.27 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
TL °C
1/8" from case for 5 seconds
Thermal Characteristics Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case 3.7 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W
©2000 Fairchild Semiconductor International Rev. A, September 2000
Page Summary Contents For Fairchild FQPF33N10L 100V Logic N-Channel MOSFET User Manual and Specifications
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 672.93 KB |
| Published | July 07, 2026 |
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Frequently Asked Questions
What continuous drain current can this MOSFET handle at room temperature?
The device supports a continuous drain current of 18 A when measured at 25°C.
What critical safety warning applies to this component's usage?
It is not authorized for use in life support devices or systems without the express written approval of Fairchild Semiconductor International.
What kind of circuit applications is this MOSFET suited for?
It is ideal for low-voltage applications, such as high efficiency switching DC/DC converters and DC motor control.
What are the operating temperature limits of the device?
The product has an operating and storage temperature range of -55 to +175°C.