Fairchild FQPF7N60 600V N-Channel MOSFET Specifications
Summary
A high-performance N-Channel MOSFET designed for demanding switching applications, rated at 600V and capable of handling 4.3A continuous drain current. This device utilizes advanced DMOS technology to ensure fast switching speeds, low gate charge, and superior avalanche resistance, making it perfect for building high-efficiency switch mode power supplies (SMPS). The comprehensive manual details its electrical performance, including absolute maximum ratings, on/off characteristics, capacitance values, and thermal management parameters. It is essential reading for power electronics engineers integrating reliable, high-frequency switching components into critical circuit designs.
Page 1 Text Content
April 2000
QFETTM
FQPF7N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.3A, 600V, RDS(on) = 1.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 29 n C) planar stripe, DMOS technology. Low Crss ( typical 16 p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the
Improved dv/dt capability
avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
SD TO-220F
FQPF Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF7N60 Units VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) 4.3
- Continuous (TC = 100°C) 2.7
IDM Drain Current - Pulsed (Note 1) 17.2 VGSS Gate-Source Voltage ±30 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) 4.3 EAR Repetitive Avalanche Energy (Note 1) 4.8 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C 0.38 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL °C
1/8 from case for 5 seconds
Thermal Characteristics Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case 2.60 °CW RθJA Thermal Resistance, Junction-to-Ambient 62.5 °CW
©2000 Fairchild Semiconductor International Rev. A, April 2000
Page Summary Contents For Fairchild FQPF7N60 600V N-Channel MOSFET Specifications
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 617.50 KB |
| Published | May 31, 2026 |
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Frequently Asked Questions
What is the maximum continuous drain current at 25°C?
The maximum continuous drain current (ID) at 25°C is 4.3 A.
What are the operating temperature limits for this MOSFET?
The operating and storage temperature range is from -55 to +150 °C.
Can this device be used in life support systems?
No, Fairchild’s products are not authorized for use as critical components in life support devices without explicit written approval.
What is the recommended maximum operating voltage (VDS)?
The absolute maximum drain-source voltage (VDSS) rating specified is 600 V.