Dell FAIRCHILD FQP8N60C FQPF8N60C 600V N-Channel MOSFET User's Manual
Summary
The FQP8N60C and FQPF8N60C are 600V N-channel MOSFETs produced using Fairchild's proprietary planar stripe DMOS technology, featuring 7.5A continuous drain current and 1.2Ω on-state resistance at 10V gate voltage. Key characteristics include low gate charge (28nC typical), low Crss (12pF), fast switching, 100% avalanche testing, and improved dv/dt capability. Available in TO-220 (FQP series) and TO-220F (FQPF series) packages, these devices are suited for high-efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts. Designed for power electronics engineers and SMPS designers.
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FQ P8N 60C /FQ PF8N 60C
QFET®
FQP8N60C/FQPF8N60C 600V N-Channel MOSFET
General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 n C) planar stripe, DMOS technology. Low Crss ( typical 12 p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the
Improved dv/dt capability
avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
TO-220 TO-220F
SD SD
FQP Series G FQPF Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQP8N60C FQPF8N60C Units VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) 7.5 7.5 *
- Continuous (TC = 100°C) 4.6 4.6 *
IDM Drain Current - Pulsed (Note 1) 30 * VGSS Gate-Source Voltage ± 30 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) 7.5 EAR Repetitive Avalanche Energy (Note 1) 14.7 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C 1.18 0.38 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL °C
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics Symbol Parameter FQP8N60C FQPF8N60C Units RθJC Thermal Resistance, Junction-to-Case 0.85 2.6 °C/W RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
©2004 Fairchild Semiconductor Corporation Rev. B, March 2004
Page Summary Contents For Dell FAIRCHILD FQP8N60C FQPF8N60C 600V N-Channel MOSFET User's Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 10 |
| File Size | 941.94 KB |
| Published | June 17, 2026 |
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Frequently Asked Questions
What are the key electrical specifications for the FQP8N60C MOSFET?
It is a 600V, 7.5A N-Channel MOSFET with a typical on-resistance of 1.2Ω at Vgs=10V and low gate charge.
How does the maximum drain current change with temperature?
The continuous drain current decreases from 7.5A at 25°C to 4.6A at a case temperature of 100°C.
What is the absolute maximum gate-source voltage?
The absolute maximum gate-source voltage rating is ±30 volts.
Is this MOSFET suitable for fast switching applications?
Yes, the datasheet lists features like fast switching, low gate charge, and low reverse transfer capacitance (Crss).
What is the thermal resistance from junction to ambient?
The thermal resistance from junction to ambient (RθJA) is 62.5 °C/W for both the TO-220 and TO-220F packages.