Fairchild FQPF12N60CT 600V N-Channel MOSFET Data Manual
Summary
This high-performance N-Channel MOSFET, FQPF12N60CT, is engineered for demanding power applications requiring maximum efficiency and fast switching. Featuring low on-state resistance ($R_{DS(on)}$) and rapid transition times, it minimizes energy loss in complex power circuits. The comprehensive data sheet provides detailed specifications—including electrical characteristics, thermal limits, and switching performance—making it ideal for engineers designing Switched Mode Power Supplies (SMPS), Active Power Factor Correction (APFC), and high-efficiency electronic lamp ballasts.
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现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好! FQ PF12N 60C T 600V N -C hannel M SFET
September 2006
FQPF12N60CT 600V N-Channel MOSFET Features Description 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V These N-Channel enhancement mode power field effect
Low gate charge ( typical 48 n C) transistors are produced using Fairchild’s proprietary, planar Low Crss ( typical 21 p F) stripe, DMOS technology. Fast switching This advanced technology has been especially tailored to 100% avalanche tested minimize on-state resistance, provide superior switching Improved dv/dt capability performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
TO-220F Potted SD FQPF Series
Absolute Maximum Ratings Symbol Parameter FQPF12N60CT Units VDSS Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C) 12*
- Continuous (TC = 100°C) 7.4*
IDM Drain Current - Pulsed (Note 1) 48*
VGSS Gate-Source Voltage ± 30
EAS Single Pulsed Avalanche Energy (Note 2) m J
IAR Avalanche Current (Note 1)
EAR Repetitive Avalanche Energy (Note 1) 5.1 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C 0.41 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C Maximum lead temperature for soldering purposes,
TL °C
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics Symbol Parameter FQPF12N60CT Units RθJC Thermal Resistance, Junction-to-Case 2.43 °C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FQPF12N60CT Rev. A
Page Summary Contents For Fairchild FQPF12N60CT 600V N-Channel MOSFET Data Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 818.50 KB |
| Published | July 16, 2026 |
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Frequently Asked Questions
What is the continuous drain current rating for this MOSFET at 25°C?
The continuous drain current (I_D) at 25°C is stated as 12 A.
Are there restrictions on using this component in critical systems?
No, Fairchild's products are not authorized for use in life support devices or systems without their express written approval.
What is the specified operating temperature range?
The permissible operating and storage temperature range for the device is -55 to +150 °C.
How is the allowable drain current limited during operation?
The maximum drain current is limited by the component's maximum junction temperature.