Fairchild FDD5N53 FDU5N53 N-Channel MOSFET Data Manual
Summary
This comprehensive technical resource details the performance and usage parameters for a high-efficiency N-Channel MOSFET. Designed with advanced planar stripe DMOS technology, this component is engineered for superior switching performance in demanding power applications, including switched mode power supplies. The manual provides detailed electrical and thermal characteristics (e.g., drain current, breakdown voltage, gate charge) required by electrical engineers and power electronics designers building reliable, compact, and high-power industrial equipment.
Page 1 Text Content
FD 5N 53 / FD 5N 53 N -C hannel M SFET
January 2009
Uni FETTM
FDD5N53/FDU5N53
N-Channel MOSFET 530V, 4A, 1.5Ω Features Description RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
Low gate charge ( Typ. 11n C)
stripe, DMOS technology.
Low Crss ( Typ. 5p F)
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
Fast switching
performance, and withstand high energy pluse in the avalanche
100% avalanche tested and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power
Improved dv/dt capability
factor correction.
Ro HS compliant
D-PAK I-PAK
FDD Series FDU Series
MOSFET Maximum Ratings TC = 25o C unless otherwise noted* Symbol Parameter FDD5N53/FDU5N53 Units
VDSS Drain to Source Voltage VGSS Gate to Source Voltage ±30
-Continuous (TC = 25o C)
ID Drain Current
-Continuous (TC = 100o C) 2.4
IDM Drain Current - Pulsed (Note 1) EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) EAR Repetitive Avalanche Energy (Note 1) m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
(TC = 25o C)
PD Power Dissipation
- Derate above 25o C 0.3 W/o C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 Maximum Lead Temperature for Soldering Purpose, o C
1/8” from Case for 5 Seconds
Thermal Characteristics Symbol Parameter Ratings Units RθJC Thermal Resistance, Junction to Case 1.4
RθJA Thermal Resistance, Junction to Ambient 110
©2009 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FDD5N53/FDU5N53 Rev. A
Page Summary Contents For Fairchild FDD5N53 FDU5N53 N-Channel MOSFET Data Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 9 |
| File Size | 244.93 KB |
| Published | May 30, 2026 |
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Frequently Asked Questions
What is the maximum continuous drain current?
The continuous drain current (ID) at 25°C is rated up to 4A.
How was the MOSFET fabricated for improved performance?
It uses Fairchild’s proprietary, planar stripe DMOS technology to minimize on-state resistance and enhance switching speed.
What are the thermal resistance values?
The Junction to Case (RthJC) is 1.4 °C/W, and the Junction to Ambient (RthJA) is 11.0 °C/W.
What power dissipation adjustment is needed above 25°C?
Power dissipation must be derated at a rate of 0.3 W/°C when operating above 25°C.