Fairchild FDD5N50NZF N-Channel MOSFET Data Handbook
Summary
Discover the FDD5N50NZF N-Channel MOSFET, an advanced power semiconductor engineered for high-efficiency applications. Utilizing planar Stripe DMOS technology, this device delivers superior switching performance and fast switching capabilities critical for modern electronics. This comprehensive manual details all key electrical characteristics, including voltage breakdown (500V), continuous current ratings (3.7A), thermal profiles, 그리고 switching times. It is ideally suited for engineers designing robust switching mode power supplies, active power factor correction circuits, and demanding high-energy pulse applications requiring reliable, low-resistance power transfer.
Page 1 Text Content
FD 5N 50N ZF N -C hannel M SFET
February 2012
Uni FET-II TM
FDD5N50NZF N-Channel MOSFET 500V, 3.7A, 1.75Ω Features Description RDS(on) = 1.47Ω ( Typ.)@ VGS = 10V, ID = 1.85A These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
Low Gate Charge ( Typ. 9n C)
stripe, DMOS technology.
Low Crss ( Typ. 4p F)
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching
Fast Switching
performance, and withstand high energy pulse in the avalanche
100% Avalanche Tested and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
Improved dv/dt Capability
correction.
ESD Imoroved Capability
Ro HS Compliant
D-PAK
MOSFET Maximum Ratings TC = 25o C unless otherwise noted* Symbol Parameter FDD5N50NZF Units
VDSS Drain to Source Voltage VGSS Gate to Source Voltage ±25
-Continuous (TC = 25o C) 3.7
ID Drain Current
-Continuous (TC = 100o C) 2.2
IDM Drain Current - Pulsed (Note 1) EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) 3.3 EAR Repetitive Avalanche Energy (Note 1) 6.25 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns
(TC = 25o C) 62.5
PD Power Dissipation
- Derate above 25o C 0.5 W/o C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 Maximum Lead Temperature for Soldering Purpose, o C
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics Symbol Parameter FDD5N50NZF Units
RθJC Thermal Resistance, Junction to Case 2
RθJA Thermal Resistance, Junction to Ambient 62.5
©2012 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FDD5N50NZF Rev. C0
Page Summary Contents For Fairchild FDD5N50NZF N-Channel MOSFET Data Handbook
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 298.90 KB |
| Published | July 15, 2026 |
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Frequently Asked Questions
What is the maximum rated drain current for this MOSFET?
The continuous draining current (ID) is 3.7A at 25°C, but derates to 2.2A at 100°C.
What are the recommended operating limits for VGS voltage?
The Gate to Source Voltage (VGS) must be used within a range of ±25 V.
Can this MOSFET withstand high energy pulses?
Yes, its Repetitive Avalanche Energy (ARE) is rated at 6.25 mJ.
What are the key features of the FDD5N50NZF technology?
It offers low gate charge, superior switching performance, and high dv/dt capability for efficient power supplies.