Fairchild FQAF16N25C 250V N-Channel MOSFET Data Handbook (1)(1)

FQ F16N 25C

QFET®

FQAF16N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 11.4A, 250V, RDS(on) = 0.27Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 41 n C) planar stripe, DMOS technology. Low Crss ( typical 68 p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.

TO-3PF

FQAF Series G

Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQAF16N25C Units VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) 11.4

- Continuous (TC = 100°C) 7.2

IDM Drain Current - Pulsed (Note 1) 45.6 VGSS Gate-Source Voltage ± 30 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) 11.4 EAR Repetitive Avalanche Energy (Note 1) 7.3 m J

dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns

PD Power Dissipation (TC = 25°C)

- Derate above 25°C 0.59 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

TL °C

1/8" from case for 5 seconds

Thermal Characteristics Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case 1.7 °C/W RθJA Thermal Resistance, Junction-to-Ambient °C/W

©2004 Fairchild Semiconductor Corporation Rev. A, March 2004